Article 11213
Title of the article |
MODELING OF A PULSE RADIATION-INDUCED POWER SOURCE |
Authors |
Pchelintseva Ekaterina Sergeevna, Candidate of physical and mathematical sciences, head of the laboratory probe and electronic microscopy, Research Technological Institute, Ulyanovsk State University (Ulyanovsk, 42 L.Tolstogo str.), nanolabniti@gmail.com |
Index UDK |
537.533.9 |
Abstract |
Objective: The present work considers modeling of pulse radiationinduced power source based on 63Ni isotope. Modeling has been performed in LTspice IV system in accordance with the structural chart of the pulseradiationinduced power source. Betavoltaic power source is a cell that combines 1000 silicon pin- structures with p-n- junction depth of 1.2 μm and silicon photodiodes with p-njunction depth of 6.5 μm connected in series and in parallel with a total junction area of 1000 cm2. From a designed pulse radiation-induced power source the authors have obtained an increase of the output voltage up to 1.3 V for the DC operation and an increase of the output pulse current up to 200 mA, voltage pulse up to 180 mV for the pulsed operation with the pulse duration under 2ms and repletion rate of about 800 Hz. The results demonstrate that the pulse radiation-induced power source can operate efficiently over 50 years generating current up to 200 mA at the maximum discharge. The sources can be employed for microelectromechanical systems requiring long lifetime power source able to operate in nooks and severe climates. |
Key words |
betavoltaic effect, radiation-induced power generation, modeling of physical processes. |
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References |
1. Guo H., Lal A. The 12th International Conference on Solid State Sensors, Actuators and Microsystems (Boston, 2003). Boston, 2003, pp. 36–39. |
Дата обновления: 21.07.2014 08:45